Device Location: Internal
Supports Data Channel: SATA III-600
External Data Bit Rate: 6 Gbps
Memory Technology: 3D NAND
Flash Memory Cell Technology: Triple-Level Cell
Maximum Random Read Rate: 94000 IOPS
Maximum Random Write Rate: 62000 IOPS
Maximum Sequential Read Rate: 530 MB/s
Maximum Sequential Write Rate: 500 MB/s
Total Bytes Written (TBW): 1.829 TB